Indium phosphide

Indium phosphide

Names
Other names Indium(III) phosphide
Identifiers
CAS Number	22398-80-7 Y
ChemSpider	28914 Y
Jmol 3D model	Interactive image
PubChem	31170
InChI InChI=1S/In.P Y Key: GPXJNWSHGFTCBW-UHFFFAOYSA-N Y InChI=1/In.P/rInP/c1-2 Key: GPXJNWSHGFTCBW-HIYQQWJCAF
SMILES [In]#P
Properties
Chemical formula	InP
Molar mass	145.792 g/mol
Appearance	black cubic crystals
Density	4.81 g/cm3, solid
Melting point	1,062 °C (1,944 °F; 1,335 K)
Solubility	slightly soluble in acids
Band gap	1.344 eV (300 K; direct)
Electron mobility	5400 cm2/(V·s) (300 K)
Thermal conductivity	0.68 W/(cm·K) (300 K)
Refractive index (nD)	3.1 (infrared); 3.55 (632.8 nm)
Structure
Crystal structure	Zinc blende
Lattice constant	a = 5.8687 Å
Coordination geometry	Tetrahedral
Thermochemistry
Specific heat capacity (C)	45.4 J/(mol·K)
Std molar entropy (So298)	59.8 J/(mol·K)
Std enthalpy of formation (ΔfHo298)	-88.7 kJ/mol
Vapor pressure	{{{value}}}
Related compounds
Other anions	Indium nitride Indium arsenide Indium antimonide
Other cations	Aluminium phosphide Gallium phosphide
Related compounds	Indium gallium phosphide Aluminium gallium indium phosphide Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Manufacturing

Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Artificially colored.

Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.

Uses

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Chemistry

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

External links

• Extensive site on the physical properties of indium phosphide (Ioffe institute)
  • Band structure and carrier concentration of InP.
• InP conference series at IEEE
• Indium Phosphide: Transcending frequency and integration limits. Semiconductor TODAY Compounds&AdvancedSilicon • Vol. 1 • Issue 3 • September 2006