Reflectance difference spectroscopy

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File:RAS principle.jpeg
Principle of RDS on the example of a cubic (100)-surface with dimers. If the dimers are rotated by 90°, the sign of the signal is changed (case a, green to case b, red).[1]

Reflectance difference spectroscopy (RDS) is a spectroscopic technique which measures the difference in reflectance of two beams of light that are shone in normal incident on a surface with different linear polarizations.[2] It is also known as reflectance anisotropy spectroscopy (RAS).[3]

It is calculated as:

 RDS= 2 \frac{r_{\alpha}-r_{\beta}}{r_{\alpha}+r_{\beta}}, r \in \mathbb{C}

r_{\alpha} and r_{\beta} are the reflectance in two different polarizations.

The method was introduced in 1956 for the study optical properties of the cubic semiconductors silicon and germanium.[4] Due to its high surface sensitivity and independence of ultra-high vacuum, its use has been expanded to in situ monitoring of epitaxial growth[5] or the interaction of surfaces with adsorbates.[1] To assign specific features in the signal to their origin in morphology and electronic structure, theoretical modelling by density functional theory is required.

References

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  2. Peter Y. Yu, Manuel Cardona ,"Fundamentals of Semiconductors"
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