Reflectance difference spectroscopy
Reflectance difference spectroscopy (RDS) is a spectroscopic technique which measures the difference in reflectance of two beams of light that are shone in normal incident on a surface with different linear polarizations.[2] It is also known as reflectance anisotropy spectroscopy (RAS).[3]
It is calculated as:
and are the reflectance in two different polarizations.
The method was introduced in 1956 for the study optical properties of the cubic semiconductors silicon and germanium.[4] Due to its high surface sensitivity and independence of ultra-high vacuum, its use has been expanded to in situ monitoring of epitaxial growth[5] or the interaction of surfaces with adsorbates.[1] To assign specific features in the signal to their origin in morphology and electronic structure, theoretical modelling by density functional theory is required.
References
- ↑ 1.0 1.1 Lua error in package.lua at line 80: module 'strict' not found.
- ↑ Peter Y. Yu, Manuel Cardona ,"Fundamentals of Semiconductors"
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